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A silicon doped hafnium oxide ferroelectric p–n–p–n SOI tunneling field–effect transistor with steep subthreshold slope and high switching state current ratio

机译：硅掺杂氧化铪铁电p-n-p-n sOI隧穿场效应晶体管，具有陡峭的亚阈值斜率和高开关电流比

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Saeid Marjani; Seyed Ebrahim Hosseini; Rahim Faez;
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1. A silicon doped hafnium oxide ferroelectric p–n–p–n SOI tunneling field–effect transistor with steep subthreshold slope and high switching state current ratio [J] . Saeid Marjani, Seyed Ebrahim Hosseini, Rahim Faez AIP Advances . 2016,第9期

机译：具有陡峭的亚阈值斜率和高开关态电流比的硅掺杂氧化ha铁电PN–PN–PN SOI隧穿场效应晶体管
2. A tunnel-induced injection field-effect transistor with steep subthreshold slope and high on-off current ratio [J] . Zhan Zhan, Huang Qianqian, Huang Ru, Applied Physics Letters . 2012,第11期

机译：具有陡峭的亚阈值斜率和高开关电流比的隧道感应注入场效应晶体管
3. A tunnel-induced injection field-effect transistor with steep subthreshold slope and high on-off current ratio [J] . Zhan Zhan, Qianqian Huang, Ru Huang, Applied Physics Letters . 2012,第11期

机译：具有陡峭的亚阈值斜率和高开关电流比的隧道感应注入场效应晶体管
4. The effects of doping, gate length, and gate dielectric on inverse subthreshold slope and on/off current ratio of a top gate silicon nanowire transistor [C] . Bhowmick Sishir, Alam Khairul, Quazi Deen Mohd Khosru International Conference on Electrical Computer Engineeringe . 2008

机译：掺杂，栅极长度和栅极电介质对顶栅硅纳米线晶体管的逆亚坡斜率的影响及开/关电流比
5. Magnetic resonance observations of defects involved in bias temperature instabilities and stress induced leakage currents in hafnium dioxide and silicon dioxide based metal-oxide-silicon structures. [D] . Ryan, Jason Thomas. 2010

机译：在二氧化f和基于二氧化硅的金属氧化物-硅结构中，与偏置温度不稳定性和应力引起的泄漏电流有关的缺陷的磁共振观察。
6. Steep‐Slope Gate‐Connected Atomic Threshold Switching Field‐Effect Transistor with MoS2 Channel and Its Application to Infrared Detectable Phototransistors [O] . Seung‐Geun Kim, Seung‐Hwan Kim, Gwang‐Sik Kim, 2021

机译：具有MOS2通道的陡坡栅极连接原子阈值开关场效应晶体管及其在红外检测光电晶体管上的应用
7. Modeling and simulation of low power ferroelectric non-volatile memory tunnel field effect transistors using silicon-doped hafnium oxide as gate dielectric [O] . A. Saeidi, A. Biswas, Adrian M. Ionescu 2016

机译：低功率铁电非易失性存储器隧道场效应晶体管的建模与仿真使用硅掺杂氧化铪作为栅极电介质

A silicon doped hafnium oxide ferroelectric p–n–p–n SOI tunneling field–effect transistor with steep subthreshold slope and high switching state current ratio

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